JPH0123949B2 - - Google Patents

Info

Publication number
JPH0123949B2
JPH0123949B2 JP54075715A JP7571579A JPH0123949B2 JP H0123949 B2 JPH0123949 B2 JP H0123949B2 JP 54075715 A JP54075715 A JP 54075715A JP 7571579 A JP7571579 A JP 7571579A JP H0123949 B2 JPH0123949 B2 JP H0123949B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
type
semiconductor device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54075715A
Other languages
English (en)
Japanese (ja)
Other versions
JPS561556A (en
Inventor
Tooru Nakamura
Takao Myazaki
Susumu Takahashi
Ichiro Imaizumi
Takahiro Okabe
Minoru Nagata
Masao Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7571579A priority Critical patent/JPS561556A/ja
Priority to DE3051130A priority patent/DE3051130C2/de
Priority to DE19803022565 priority patent/DE3022565A1/de
Publication of JPS561556A publication Critical patent/JPS561556A/ja
Priority to US07/056,127 priority patent/US4933737A/en
Publication of JPH0123949B2 publication Critical patent/JPH0123949B2/ja
Priority to US07/501,964 priority patent/US5019523A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP7571579A 1979-06-18 1979-06-18 Semiconductor device Granted JPS561556A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP7571579A JPS561556A (en) 1979-06-18 1979-06-18 Semiconductor device
DE3051130A DE3051130C2 (de) 1979-06-18 1980-06-16 Verfahren zur Herstellung eines Bipolartransistors
DE19803022565 DE3022565A1 (de) 1979-06-18 1980-06-16 Halbleiteranordnung
US07/056,127 US4933737A (en) 1979-06-18 1987-06-01 Polysilon contacts to IC mesas
US07/501,964 US5019523A (en) 1979-06-18 1990-03-30 Process for making polysilicon contacts to IC mesas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7571579A JPS561556A (en) 1979-06-18 1979-06-18 Semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP61167923A Division JPS6211271A (ja) 1986-07-18 1986-07-18 半導体装置
JP61308413A Division JPS62162359A (ja) 1986-12-26 1986-12-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS561556A JPS561556A (en) 1981-01-09
JPH0123949B2 true JPH0123949B2 (en]) 1989-05-09

Family

ID=13584214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7571579A Granted JPS561556A (en) 1979-06-18 1979-06-18 Semiconductor device

Country Status (3)

Country Link
US (2) US4933737A (en])
JP (1) JPS561556A (en])
DE (1) DE3022565A1 (en])

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122158A (en) * 1980-03-03 1981-09-25 Toshiba Corp Semiconductor device
JPS57148370A (en) * 1981-03-10 1982-09-13 Nec Corp Semiconductor device
JPS59161867A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd 半導体装置
US4860086A (en) * 1983-08-30 1989-08-22 Hitachi, Ltd. Semiconductor device
JPS6098659A (ja) * 1983-11-02 1985-06-01 Hitachi Ltd 直列接続トランジスタを有する半導体集積回路
GB8329740D0 (en) * 1983-11-08 1983-12-14 Ti Group Services Ltd Heat pipe system
US4523370A (en) * 1983-12-05 1985-06-18 Ncr Corporation Process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction
US4832364A (en) * 1985-01-28 1989-05-23 Toyota Jidosha Kabushiki Kaisha Rear suspension for vehicle
JP2741854B2 (ja) 1986-06-18 1998-04-22 株式会社日立製作所 半導体集積回路装置
US4949162A (en) * 1987-06-05 1990-08-14 Hitachi, Ltd. Semiconductor integrated circuit with dummy pedestals
JP2613598B2 (ja) * 1987-07-10 1997-05-28 株式会社日立製作所 半導体装置
US5227660A (en) * 1987-11-09 1993-07-13 Hitachi, Ltd. Semiconductor device
NL8800157A (nl) * 1988-01-25 1989-08-16 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
US5001533A (en) * 1988-12-22 1991-03-19 Kabushiki Kaisha Toshiba Bipolar transistor with side wall base contacts
FR2645345A1 (fr) * 1989-03-31 1990-10-05 Thomson Csf Procede de modulation dirigee de la composition ou du dopage de semi-conducteurs, notamment pour la realisation de composants electroniques monolithiques de type planar, utilisation et produits correspondants
US5237200A (en) * 1989-07-28 1993-08-17 Hitachi, Ltd. Semiconductor bipolar transistor with concentric regions
JPH04373133A (ja) * 1991-06-24 1992-12-25 Hitachi Ltd 半導体装置
US10720853B1 (en) * 2017-11-07 2020-07-21 Matthew Barlow Integrated silicon carbide diode rectifier circuits
US11251717B1 (en) 2017-11-07 2022-02-15 Matthew Barlow Integrated silicon carbide diode rectifier circuits

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device
US3519901A (en) * 1968-01-29 1970-07-07 Texas Instruments Inc Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation
US3577045A (en) * 1968-09-18 1971-05-04 Gen Electric High emitter efficiency simiconductor device with low base resistance and by selective diffusion of base impurities
US3664896A (en) * 1969-07-28 1972-05-23 David M Duncan Deposited silicon diffusion sources
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon
US3768150A (en) * 1970-02-13 1973-10-30 B Sloan Integrated circuit process utilizing orientation dependent silicon etch
US3631307A (en) * 1970-02-13 1971-12-28 Itt Semiconductor structures having improved high-frequency response and power dissipation capabilities
US3740276A (en) * 1970-08-24 1973-06-19 Texas Instruments Inc Multi-component semiconductor network and method for making same
US3764413A (en) * 1970-11-25 1973-10-09 Nippon Electric Co Method of producing insulated gate field effect transistors
US3776786A (en) * 1971-03-18 1973-12-04 Motorola Inc Method of producing high speed transistors and resistors simultaneously
US4396933A (en) * 1971-06-18 1983-08-02 International Business Machines Corporation Dielectrically isolated semiconductor devices
CH540991A (fr) * 1971-07-07 1973-08-31 Battelle Memorial Institute Procédé pour augmenter la résistance à l'usure de la surface d'une pièce en "métal dur"
US3847687A (en) * 1972-11-15 1974-11-12 Motorola Inc Methods of forming self aligned transistor structure having polycrystalline contacts
US3956033A (en) * 1974-01-03 1976-05-11 Motorola, Inc. Method of fabricating an integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector
JPS5244579A (en) * 1975-10-06 1977-04-07 Matsushita Electric Ind Co Ltd Process for production of mos type semiconductor device
JPS5244186A (en) * 1975-10-06 1977-04-06 Hitachi Ltd Semiconductor intergrated circuit device
JPS5846062B2 (ja) * 1977-04-11 1983-10-14 日本電信電話株式会社 半導体装置及びその製法
JPS53132275A (en) 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
JPS53145485A (en) * 1977-05-24 1978-12-18 Mitsubishi Electric Corp Production of semiconductor device having serrations on semiconductor surface
JPS53147482A (en) * 1977-05-27 1978-12-22 Nippon Telegr & Teleph Corp <Ntt> Production of semiconductor device
US4190949A (en) * 1977-11-14 1980-03-04 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device
JPS5469079A (en) * 1977-11-14 1979-06-02 Toshiba Corp Manufacture of semiconductor device
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
JPS55128869A (en) * 1979-03-26 1980-10-06 Mitsubishi Electric Corp Semiconductor device and method of fabricating the same
US4229474A (en) * 1979-05-25 1980-10-21 Trw Inc. Breakage resistant V-grooved <100> silicon substrates
US4252581A (en) * 1979-10-01 1981-02-24 International Business Machines Corporation Selective epitaxy method for making filamentary pedestal transistor
US4333227A (en) * 1979-11-29 1982-06-08 International Business Machines Corporation Process for fabricating a self-aligned micrometer bipolar transistor device
US4339767A (en) * 1980-05-05 1982-07-13 International Business Machines Corporation High performance PNP and NPN transistor structure
JPS6054453A (ja) * 1983-09-05 1985-03-28 Oki Electric Ind Co Ltd 半導体集積回路装置の製造方法
JPS6092661A (ja) * 1983-10-27 1985-05-24 Toshiba Corp 半導体装置
JPH0618198B2 (ja) * 1984-02-15 1994-03-09 株式会社日立製作所 半導体装置
US4782030A (en) * 1986-07-09 1988-11-01 Kabushiki Kaisha Toshiba Method of manufacturing bipolar semiconductor device

Also Published As

Publication number Publication date
JPS561556A (en) 1981-01-09
DE3022565A1 (de) 1981-01-08
US4933737A (en) 1990-06-12
US5019523A (en) 1991-05-28

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